SE5450 Series GaAs Infrared Emitting Diode, TO-46 Metal Can || SE5450-012
Артикул: SE5450-012
Наименование: SE5450 Series GaAs Infrared Emitting Diode, TO-46 Metal Can || SE5450-012
Производитель: Honeywell
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| Description | | The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments. | | Features | - TO-46 metal can package
- Choice of flat window or lensed package
- 90 ° or 20 ° (nominal) beam angle option
- 880 nm wavelength
- Higher output power than GaAs at equivalent drive currents
- Wide operating temperature range [-55 °C to 125 °C]
- Ideal for high pulsed current applications
- Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491 phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger
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| | Product Specifications | | Series Name | SE5450 | | Product Type | IR Component | | Power Output | 0.50 mW/cm² min | | Beam Angle (Degree) | 20 | | Package Type | T0-46, Dome Lensed | | Forward Current | 100 mA | | Continuous Forward Current | 100 mA | | Forward Voltage | 1.7 V | | Reverse Breakdown Voltage | 3 V | | Output Wavelength | 935 nm | | Spectral Bandwidth | 50 nm | | Spectral Shift With Temperature | 0.3 nm/°C | | Rise and Fall Time | 0.7 µs | | Power Dissipation | 150 mW | | Operating Temperature | -55 °C to 125 °C [-67 °F to 257 °F] | | Availability | Global |
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