SEP8505 Series GaAs Infrared Emitting Diode, T-1 Package || SEP8505-001
Артикул: SEP8505-001
Наименование: SEP8505 Series GaAs Infrared Emitting Diode, T-1 Package || SEP8505-001
Производитель: Honeywell
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| Description | | The SEP8505 is a gallium arsenide infrared emitting diode transfer molded in a T-1 red plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification. | | Features | - T-1 package
- 15 ° (nominal) beam angle
- 935 nm wavelength
- Consistent on-axis optical properties
- Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington
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| | Product Specifications | | Series Name | SEP8505 | | Product Type | IR Component | | Power Output | 0.50 mW/cm² min | | Beam Angle (Degree) | 15 | | Package Type | T1 | | Package Components | Plastic | | Forward Current | 20 mA | | Continuous Forward Current | 50 mA | | Forward Voltage | 1.5 V | | Reverse Breakdown Voltage | 3 V | | Output Wavelength | 935 nm | | Spectral Bandwidth | 50 nm | | Spectral Shift With Temperature | 0.3 nm/°C | | Rise and Fall Time | 0.7 µs | | Power Dissipation | 70 mW | | Operating Temperature | -55 °C to 125 °C [-67 °F to 257 °F] | | Availability | Global |
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