SEP8506 Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package || SEP8506-001
Артикул: SEP8506-001
Наименование: SEP8506 Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package || SEP8506-001
Производитель: Honeywell
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Description | The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. | Features | - T-1 package
- 15 ° (nominal) beam angle
- 935 nm wavelength
- Consistent on-axis optical properties
- Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington
| | | Product Specifications | Series Name | SEP8506 | Product Type | IR Component | Power Output | 0.05 - 0.36 mW/cm² | Beam Angle (Degree) | 50 | Package Type | Side-Emitting | Package Components | Plastic | Forward Current | 20 mA | Continuous Forward Current | 50 mA | Forward Voltage | 1.5 V | Reverse Breakdown Voltage | 3 V | Output Wavelength | 935 nm | Spectral Bandwidth | 50 nm | Spectral Shift With Temperature | 0.3 nm/°C | Rise and Fall Time | 0.7 µs | Power Dissipation | 100 mW | Operating Temperature | -40 °C to 85 °C [-40 °F to 185 °F] | Availability | Global |
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