SEP8506 Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package || SEP8506-003
Артикул: SEP8506-003
Наименование: SEP8506 Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package || SEP8506-003
Производитель: Honeywell
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| Description | | The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. | | Features | - Side-emitting plastic package
- 50 ° (nominal) beam angle
- 935 nm wavelength
- Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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| | Product Specifications | | Series Name | SEP8506 | | Product Type | IR Component | | Power Output | 0.45 - 0.90 mW/cm² | | Beam Angle (Degree) | 50 | | Package Type | Side-Emitting | | Package Components | Plastic | | Forward Current | 20 mA | | Continuous Forward Current | 50 mA | | Forward Voltage | 1.5 V | | Reverse Breakdown Voltage | 3 V | | Output Wavelength | 935 nm | | Spectral Bandwidth | 50 nm | | Spectral Shift With Temperature | 0.3 nm/°C | | Rise and Fall Time | 0.7 µs | | Power Dissipation | 100 mW | | Operating Temperature | -40 °C to 85 °C [-40 °F to 185 °F] | | Availability | Global |
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