SEP8507 Series GaAs Infrared Emitting Diode, End-looking Plastic Package || SEP8507-001
Артикул: SEP8507-001
Наименование: SEP8507 Series GaAs Infrared Emitting Diode, End-looking Plastic Package || SEP8507-001
Производитель: Honeywell
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| Description | | The SEP8507 is a gallium arsenide infrared emitting diode molded in an end-emitting red plastic package. The chip is positioned to emit radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification. | | Features | - End-emitting plastic package
- 135 ° (nominal) beam angle
- 935 nm wavelength
- Low profile for design flexibility
- Mechanically and spectrally matched to SDP8407 phototransistor
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| | Product Specifications | | Series Name | SEP8507 | | Product Type | IR Component | | Power Output | 0.40 mW min | | Beam Angle (Degree) | 135 | | Package Type | End-Emitting | | Package Components | Plastic | | Forward Current | 20 mA | | Continuous Forward Current | 60 mA | | Forward Voltage | 1.5 V | | Reverse Breakdown Voltage | 3 V | | Output Wavelength | 935 nm | | Spectral Bandwidth | 50 nm | | Spectral Shift With Temperature | 0.3 nm/°C | | Rise and Fall Time | 0.7 µs | | Power Dissipation | 100 mW | | Operating Temperature | -40 °C to 85 °C [-40 °F to 185 °F] | | Availability | Global |
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