SEP8705 Series AlGaAs Infrared Emitting Diode, T-1 Package || SEP8705-001
Артикул: SEP8705-001
Наименование: SEP8705 Series AlGaAs Infrared Emitting Diode, T-1 Package || SEP8705-001
Производитель: Honeywell
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Description | The SEP8705 is an aluminum gallium arsenide infrared emitting diode transfer molded in a T-1 smoke gray plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. These devices typically exhibit 70% greater power intensity compared to GaAs devices at the same forward current. Lead lengths are staggered to provide a simple method of polarity identification. | Features | - T-1 package
- 15 ° (nominal) beam angle
- 880 nm wavelength
- Consistent optical properties
- Higher output than GaAs at equivalent drive current
- Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington
| | | Product Specifications | Series Name | SEP8705 | Product Type | IR Component | Power Output | 0.54 mW/cm² min | Beam Angle (Degree) | 15 | Package Type | T1 | Package Components | Plastic | Forward Current | 20 mA | Continuous Forward Current | 50 mA | Forward Voltage | 1.7 V | Reverse Breakdown Voltage | 3 V | Output Wavelength | 880 nm | Spectral Bandwidth | 80 nm | Spectral Shift With Temperature | 0.2 nm/°C | Rise and Fall Time | 0.7 µs | Power Dissipation | 70 mW | Operating Temperature | -40 °C to 85 °C [-40 °F to 185 °F] | Availability | Global |
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